Search results for "Atmospheric escape"
showing 4 items of 4 documents
Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots
2012
We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples. © 2012 American Institute of Physics.
Temperature dependent optical properties of stacked InGaAs/GaAs quantum rings
2008
4 páginas, 3 figuras, 2 tablas.-- MADICA 2006 Conference, Fifth Maghreb-Europe Meeting on Materials and their Applicatons for Devices and Physical, Chemical and Biological Sensors
Exciton recombination dynamics inInAs∕InPself-assembled quantum wires
2005
In this work we investigate the exciton recombination dynamics in InAs/ InP semiconductor self-assembled quantum wires, by means of continuous wave and time resolved photoluminescence. The continuous wave photoluminescence results seem to indicate that the temperature quenching of the emission band seems to be more probably due to unipolar thermal escape of electrons towards the InP barrier. On the other hand, the analysis of time resolved photoluminescence reveals that the temperature dependence of the radiative and nonradiative recombination times is mainly determined by the dynamics of excitons localized by disorder shigh energy tail of the PL bandd and strongly localized slow energy tai…
Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires
2001
InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires.